FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|
| FHW1210HC6R8KGT | 6.8µH | 10% | 20 | 8 | |
| FHW1008UC6R8JGT | 6.8µH | 5% | 18 | 8.2 | |
| FHW1008UC6R8KGT | 6.8µH | 10% | 18 | 8.2 | |
| FHW1210HC5R6KGT | 5.6µH | 10% | 20 | 5 | |
| FHW1210HC5R6JGT | 5.6µH | 5% | 20 | 5 | |
| FHW1008UC5R6JGT | 5.6µH | 5% | 18 | 7.6 | |
| FHW1008UC5R6KGT | 5.6µH | 10% | 18 | 7.6 | |
| FHW1210HC4R7KGT | 4.7µH | 10% | 16 | 4 | |
| FHW1210HC4R7JGT | 4.7µH | 5% | 16 | 4 | |
| FHW1008UC4R7KGT | 4.7µH | 10% | 18 | 4 | |
| FHW1008UC4R7JGT | 4.7µH | 5% | 18 | 4 | |
| FHW1008UC4R3KGT | 4.3µH | 10% | 18 | 3.8 | |
| FHW1008UC4R3GGT | 4.3µH | 2% | 18 | 3.8 | |
| FHW1008UC4R3JGT | 4.3µH | 5% | 18 | 3.8 | |
| FHW1210HC3R9GGT | 3.9µH | 2% | 20 | 3.6 |