FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|
| FHW0603UC020KST | 20nH | ±10% | 38 | 0.19 | |
| FHW0603UC020GST | 20nH | ±2% | 38 | 0.19 | |
| FHW0603UC020JST | 20nH | ±5% | 38 | 0.19 | |
| FHW1008UC020JGT | 20nH | ±5% | 50 | 0.12 | |
| FHW1008UC020KGT | 20nH | ±10% | 50 | 0.12 | |
| FHW1008UC020GGT | 20nH | ±2% | 50 | 0.12 | |
| FHW0805UC020GGT | 20nH | ±2% | 55 | 0.22 | |
| FHW0805UC020JGT | 20nH | ±5% | 55 | 0.22 | |
| FHW0805UC020KGT | 20nH | ±10% | 55 | 0.22 | |
| FHW0603UC018GST | 18nH | ±2% | 35 | 0.17 | |
| FHW0603UC018KST | 18nH | ±10% | 35 | 0.17 | |
| FHW0603UC018JST | 18nH | ±5% | 35 | 0.17 | |
| FHW1210HC018JGT | 18nH | ±5% | 50 | 0.1 | |
| FHW1210HC018KGT | 18nH | ±10% | 50 | 0.1 | |
| FHW1210HC018GGT | 18nH | ±2% | 50 | 0.1 |