FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|
| FHW0805UC5N1KGT | 5.1nH | ±10% | 50 | 0.05 | |
| FHW0603UC4N7GST | 4.7nH | ±2% | 20 | 0.116 | |
| FHW0603UC4N7KST | 4.7nH | ±10% | 20 | 0.116 | |
| FHW0603UC4N7JST | 4.7nH | ±5% | 20 | 0.116 | |
| FHW0402UC4N7JST | 4.7nH | ±5% | |||
| FHW1210HC4N7KGT | 4.7nH | ±10% | 30 | 0.065 | |
| FHW1210HC4N7JGT | 4.7nH | ±5% | 30 | 0.065 | |
| FHW1008UC4N7KGT | 4.7nH | ±10% | 50 | 0.045 | |
| FHW1008UC4N7JGT | 4.7nH | ±5% | 50 | 0.045 | |
| FHW0805UC4N7KGT | 4.7nH | ±10% | 40 | 0.05 | |
| FHW0603UC4N3JST | 4.3nH | ±5% | 22 | 0.075 | |
| FHW0603UC4N3GST | 4.3nH | ±2% | 22 | 0.075 | |
| FHW0603UC4N3KST | 4.3nH | ±10% | 22 | 0.075 | |
| FHW0402UC4N3JST | 4.3nH | ±5% | |||
| FHW1008UC4N3KGT | 4.3nH | ±10% | 50 | 0.04 |