FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|
| FHW1008UC4N3JGT | 4.3nH | ±5% | 50 | 0.04 | |
| FHW0603UC3N9GST | 3.9nH | ±2% | 22 | 0.08 | |
| FHW0603UC3N9KST | 3.9nH | ±10% | 22 | 0.08 | |
| FHW0603UC3N9JST | 3.9nH | ±5% | 22 | 0.08 | |
| FHW0402UC3N9JST | 3.9nH | ±5% | |||
| FHW1210HC3N9KGT | 3.9nH | ±10% | 30 | 0.05 | |
| FHW1008UC3N9JGT | 3.9nH | ±5% | 50 | 0.035 | |
| FHW1008UC3N9KGT | 3.9nH | ±10% | 50 | 0.035 | |
| FHW0603UC3N6GST | 3.6nH | ±2% | 22 | 0.075 | |
| FHW0603UC3N6JST | 3.6nH | ±5% | 22 | 0.075 | |
| FHW0603UC3N6KST | 3.6nH | ±10% | 22 | 0.075 | |
| FHW0603UC3N3KST | 3.3nH | ±10% | 20 | 0.075 | |
| FHW0402UC3N3KST | 3.3nH | ±10% | |||
| FHW0402UC3N3JST | 3.3nH | ±5% | |||
| FHW0402UC3N3JSTK | 3.3nH | ±5% |